ATM7N65ATE Datasheet. Specs and Replacement
Type Designator: ATM7N65ATE 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 118 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO252
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ATM7N65ATE substitution
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ATM7N65ATE datasheet
atm7n65ate.pdf
ATM7N65ATE N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 650V Drain Current 8A DESCRIPTION The ATM7N65ATE is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high spe... See More ⇒
Detailed specifications: AP4953B, AP5N40D, AP5N50BD, AP5N50D, ATM3407PSA, ATM3415KPSA, ATM6402NSA, ATM7414NDH, AON7408, ATM8205DNPD, ATM8205DNSG, ATM9435PPA, AP60P03D, AP65N03DF, AP65N04DF, AP65N06NF, AP68N04DF
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