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ATM7N65ATE Spec and Replacement


   Type Designator: ATM7N65ATE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 118 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO252

 ATM7N65ATE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ATM7N65ATE Specs

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ATM7N65ATE

ATM7N65ATE N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 650V Drain Current 8A DESCRIPTION The ATM7N65ATE is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high spe... See More ⇒

Detailed specifications: AP4953B , AP5N40D , AP5N50BD , AP5N50D , ATM3407PSA , ATM3415KPSA , ATM6402NSA , ATM7414NDH , AON7408 , ATM8205DNPD , ATM8205DNSG , ATM9435PPA , AP60P03D , AP65N03DF , AP65N04DF , AP65N06NF , AP68N04DF .

History: STW15N50 | HAT1023R | 3SK107 | TTX2N7002KA

Keywords - ATM7N65ATE MOSFET specs

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