ATM8205DNPD Datasheet. Specs and Replacement
Type Designator: ATM8205DNPD 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TSSOP8
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ATM8205DNPD substitution
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ATM8205DNPD datasheet
atm8205dnpd.pdf
ATM8205DNPD Dual N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage 20V Continuous Drain Current 5A Descriptions TSSOP8 The ATM8205DNPD uses advanced trench technology to provide excellent RDS(ON),low gate charge and operation with gate voltages as low as 2.5V.This device is suitable for use as a battery protection or in other switching application. Features VDS=20V,ID=5... See More ⇒
atm8205dnsg.pdf
ATM8205DNSG Dual N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage 20V Continuous Drain Current 5A Descriptions The ATM8205DNSG uses advanced trench technology to provide excellent RDS(ON),low gate charge and operation with gate voltages as low as 2.5V.This device is suitable for use as a battery protection or in other switching application. Features VDS=20V,ID=5A Typ.R... See More ⇒
Detailed specifications: AP5N40D, AP5N50BD, AP5N50D, ATM3407PSA, ATM3415KPSA, ATM6402NSA, ATM7414NDH, ATM7N65ATE, 2SK3878, ATM8205DNSG, ATM9435PPA, AP60P03D, AP65N03DF, AP65N04DF, AP65N06NF, AP68N04DF, AP68N04NF
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