AP30P03D Datasheet. Specs and Replacement
Type Designator: AP30P03D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11.2 nS
Cossⓘ - Output Capacitance: 194 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO252
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AP30P03D datasheet
ap30p03d.pdf
AP30P03D -30V P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 , unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V =0V , I =-250uA -30 --- --- V GS D BVDSS/ TJ BV Temperature Coefficient DSS Reference to 25 , I =-1mA --- -0.022 --- D V/ V =-10V , I =-15A --- 18 20 GS D m RDS(O... See More ⇒
ap30p03df.pdf
AP30P03DF 30V P-Channel Enhancement Mode MOSFET Description The AP30P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-30A DS D R ... See More ⇒
Detailed specifications: AP6946A, AP6G03LI, AP260N12TLG1, AP30N10Y, AP30N15D, AP30N20P, AP30P01DF, AP30P02DF, IRF1010E, AP40N02D, AP40N03S, AP40N10P, AP40N20MP, AP40P02D, AP40P03DF, AP40P04D, AP40P04DF
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