BS870 Datasheet and Replacement
Type Designator: BS870
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.25 A
Cossⓘ - Output Capacitance: 22 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: SOT23
BS870 substitution
BS870 Datasheet (PDF)
bs870.pdf

BS870N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOT-23 Low Gate Threshold Voltage Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020C Fast Swit
Datasheet: 2N7002A , STU442S , 2N7002E , STU441S , STU446S , 2N7002VAC , 2N7002VC , STU438S , IRF640 , BSN20 , BSS138DW , STU438A , DMB53D0UDW , DMB53D0UV , DMB54D0UDW , DMB54D0UV , DMG1026UV .
History: MDP14N25CTH
Keywords - BS870 MOSFET datasheet
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History: MDP14N25CTH



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