AGM320M Specs and Replacement

Type Designator: AGM320M

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7(1) W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8(6.8) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23(9) nS

Cossⓘ - Output Capacitance: 59(47) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028(0.068) Ohm

Package: SOP8

AGM320M substitution

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AGM320M datasheet

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AGM320M

AGM320M General Description Product Summary The AGM320M combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID device is This ideal for load switch and battery 30V 19.5m 8.0A protection applications. -30V 48m -6.8A Features Advance high cell density Trench technology SOP8 Pin Configuration R to... See More ⇒

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 agm325me.pdf pdf_icon

AGM320M

AGM325ME N Channel Typical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. Normalized Threshold Voltage Vs. Temperature VGS, Gate -Source Voltage (V) ID , Drain Current (A) Fig3. Typical Transfer Characteristics Fig4. On-Resistance vs. Drain Current and Gate VSD, Source-Drain Voltage (V) VDS, Drain -Source ... See More ⇒

Detailed specifications: AGM314MAP, AGM314MD, AGM315MBP, AGM315MN, AGM318D, AGM318MAP, AGM318MBP, AGM318MN, IRF1010E, AGM325ME, AGM3400E, AGM15N10D-G, AGM15P13AS, AGM15P13E, AGM15P16AS, AGM15P22AS, AGM15P30AS

Keywords - AGM320M MOSFET specs

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