All MOSFET. AGM325ME Datasheet

 

AGM325ME Datasheet and Replacement


   Type Designator: AGM325ME
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 54.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOT23-6L
 

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AGM325ME Datasheet (PDF)

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AGM325ME

AGM325MEN Channel Typical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature (C) Fig1. Typical Output Characteristics Fig2. Normalized Threshold Voltage Vs. Temperature VGS, Gate -Source Voltage (V) ID , Drain Current (A) Fig3. Typical Transfer Characteristics Fig4. On-Resistance vs. Drain Current and Gate VSD, Source-Drain Voltage (V) VDS, Drain -Source

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AGM325ME

AGM320M General DescriptionProduct SummaryThe AGM320M combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDdevice isThis ideal for load switch and battery30V 19.5m 8.0Aprotection applications.-30V 48m -6.8A Features Advance high cell density Trench technologySOP8 Pin ConfigurationR to

Datasheet: AGM314MD , AGM315MBP , AGM315MN , AGM318D , AGM318MAP , AGM318MBP , AGM318MN , AGM320M , IRF1407 , AGM3400E , , , , , , , .

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