AGM2319EL MOSFET Datasheet: P-Ch, 40V, 4A. Full specification with pinout and replacement list

AGM2319EL Specs and Replacement

Type Designator: AGM2319EL

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.5 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SOT23

AGM2319EL substitution

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AGM2319EL datasheet

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AGM2319EL Typical Characteristics 8 8 VDS= -3V VGS = -10V VGS = -4.5V 6 6 VGS = -3.5V VGS = -3V 4 4 2 2 VGS = -2.5V 0 0 0 1 2 3 4 5 0 1 2 3 4 Drain-source voltage -VDS (V) Gate-source voltage -VGS (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 300 10 ID= -5A 250 200 1 150 100 0.1 50 0.2 0.4 0.6 0.8 1.0 1.2 0 3 6 9 12 15 Source-drain... See More ⇒

9.1. Size:823K cn agmsemi
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AGM2309EL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A -60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltag... See More ⇒

Detailed specifications: AGM210MAP, AGM210S, AGM215MNE, AGM215TS, AGM216ME, AGM216MNE, AGM218MAP, AGM2309EL, MMIS60R580P, AGM25N15C, AGM30P10AP, AGM30P10K, AGM30P10S, AGM30P10SR, AGM30P110A, AGM30P110D, AGM30P12D