All MOSFET. AGM2319EL Datasheet

 

AGM2319EL Datasheet and Replacement


   Type Designator: AGM2319EL
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT23
 

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AGM2319EL Datasheet (PDF)

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AGM2319EL

AGM2319ELTypical Characteristics88VDS= -3VVGS = -10V VGS = -4.5V 6 6VGS = -3.5V VGS = -3V 4422VGS = -2.5V 000 1 2 3 4 50 1 2 3 4Drain-source voltage -VDS (V) Gate-source voltage -VGS (V)Figure 1. Output Characteristics Figure 2. Transfer Characteristics30010ID= -5A25020011501000.1 500.2 0.4 0.6 0.8 1.0 1.2 0 3 6 9 12 15Source-drain

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AGM2319EL

AGM2309ELTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A -60 -- -- VGS DDSSZero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltag

Datasheet: AGM210MAP , AGM210S , AGM215MNE , AGM215TS , AGM216ME , AGM216MNE , AGM218MAP , AGM2309EL , STP65NF06 , AGM25N15C , , , , , , , .

Keywords - AGM2319EL MOSFET datasheet

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