AGM25N15C PDF and Equivalents Search

 

AGM25N15C Specs and Replacement

Type Designator: AGM25N15C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.9 nS

Cossⓘ - Output Capacitance: 257 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: TO220

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AGM25N15C datasheet

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 agm25n15c.pdf pdf_icon

AGM25N15C

AGM25N15C General Description Product Summary The AGM25N15C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 150V 24m 52A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to min... See More ⇒

Detailed specifications: AGM210S, AGM215MNE, AGM215TS, AGM216ME, AGM216MNE, AGM218MAP, AGM2309EL, AGM2319EL, AOD4184A, AGM30P10AP, AGM30P10K, AGM30P10S, AGM30P10SR, AGM30P110A, AGM30P110D, AGM30P12D, AGM30P12M

Keywords - AGM25N15C MOSFET specs

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