All MOSFET. AGM25N15C Datasheet

 

AGM25N15C Datasheet and Replacement


   Type Designator: AGM25N15C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.9 nS
   Cossⓘ - Output Capacitance: 257 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TO220
 

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AGM25N15C Datasheet (PDF)

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AGM25N15C

AGM25N15C General DescriptionProduct SummaryThe AGM25N15C combines advanced trenchMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)This device is ideal switch and batteryfor loadBVDSS RDSON IDprotection applications.150V 24m 52A FeaturesAdvance high cell density Trench technologyTO-220 Pin ConfigurationLow R to min

Datasheet: AGM210S , AGM215MNE , AGM215TS , AGM216ME , AGM216MNE , AGM218MAP , AGM2309EL , AGM2319EL , AO4468 , , , , , , , , .

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