AGM2N7002K3 MOSFET Datasheet: N-Ch, 60V, 0.3A. Full specification with pinout and replacement list

AGM2N7002K3 Specs and Replacement

Type Designator: AGM2N7002K3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: SOT23

AGM2N7002K3 substitution

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AGM2N7002K3 datasheet

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AGM2N7002K3 Typical Performance Characteristics www.agm-mos.com 3 VER2.65 AGM2N7002K3 SOT23 Marking Instructions www.agm-mos.com 5 VER2.65 AGM2N7002K3 Disclaimer The information provided in this document is believed to be accurate and reliable. However,Shenzhen Core Control Source Electronics Technology Co., Ltd. does not assume any responsibility for the following consequence... See More ⇒

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AGM2N7002 General Description Product Summary The AGM2N7002 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 60V 0.95 0.3A Features Advance high cell density Trench technology SOT-23 Pin Configuration Low R to mi... See More ⇒

Detailed specifications: AGM30P14MBP, AGM30P16AP, AGM30P16D, AGM30P16S, AGM30P18E, AGM30P18S, AGM30P20AP, AGM2N7002, IRF1404, AGM3005A, AGM3012AP-CP, AGM3015A, AGM3015D, AGM3015H, AGM301A1, AGM301C1, AGM302A1