All MOSFET. AGMH70N90H Datasheet

 

AGMH70N90H Datasheet and Replacement


   Type Designator: AGMH70N90H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 91 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 101 nS
   Cossⓘ - Output Capacitance: 303 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO263
 

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AGMH70N90H Datasheet (PDF)

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AGMH70N90H

AGMH70N90HTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 65 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage

 5.1. Size:1238K  cn agmsemi
 agmh70n90c.pdf pdf_icon

AGMH70N90H

AGMH70N90CTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 65 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage

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 agmh70n70d.pdf pdf_icon

AGMH70N90H

AGMH70N70DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250A 68 -- -- VGS DZero Gate Voltage Drain Current V =68V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100VGS(th) Gate Threshold Voltage V

 7.2. Size:1176K  cn agmsemi
 agmh70n70c.pdf pdf_icon

AGMH70N90H

AGMH70N70CTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250A 68 -- -- VGS DZero Gate Voltage Drain Current V =68V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100VGS(th) Gate Threshold Voltage V

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Datasheet: AGMH6080H , AGMH612D , AGMH614C , AGMH614D , AGMH614H , AGMH70N70C , AGMH70N70D , AGMH70N90C , 12N60 , AGML315ME , AGMS5N50D , , , , , , .

History: AGMH70N90C

Keywords - AGMH70N90H MOSFET datasheet

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