AGML315ME PDF and Equivalents Search

 

AGML315ME PDF Specs and Replacement


   Type Designator: AGML315ME
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.6(4.2) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 28(31) nS
   Cossⓘ - Output Capacitance: 71(74) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029(0.046) Ohm
   Package: SOT23-6L
 

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AGML315ME PDF Specs

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AGML315ME

AGML315ME General Description The AGML315ME combines advanced trench Product Summary MOSFET technology with a low resistance to provide extremely low R . package DS(ON) BVDSS RDSON ID device is This ideal for load switch and battery protection applications. 30V 25m 5.6A Features -30V 43m -4.2A Advance high cell density Trench technology Low R to minimize cond... See More ⇒

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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