AGML315ME PDF Specs and Replacement
Type Designator: AGML315ME
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.6(4.2) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28(31) nS
Cossⓘ - Output Capacitance: 71(74) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029(0.046) Ohm
Package: SOT23-6L
AGML315ME substitution
AGML315ME PDF Specs
agml315me.pdf
AGML315ME General Description The AGML315ME combines advanced trench Product Summary MOSFET technology with a low resistance to provide extremely low R . package DS(ON) BVDSS RDSON ID device is This ideal for load switch and battery protection applications. 30V 25m 5.6A Features -30V 43m -4.2A Advance high cell density Trench technology Low R to minimize cond... See More ⇒
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