AGML315ME PDF and Equivalents Search

 

AGML315ME Specs and Replacement

Type Designator: AGML315ME

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.6(4.2) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28(31) nS

Cossⓘ - Output Capacitance: 71(74) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029(0.046) Ohm

Package: SOT23-6L

AGML315ME substitution

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AGML315ME datasheet

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AGML315ME

AGML315ME General Description The AGML315ME combines advanced trench Product Summary MOSFET technology with a low resistance to provide extremely low R . package DS(ON) BVDSS RDSON ID device is This ideal for load switch and battery protection applications. 30V 25m 5.6A Features -30V 43m -4.2A Advance high cell density Trench technology Low R to minimize cond... See More ⇒

Detailed specifications: AGMH612D, AGMH614C, AGMH614D, AGMH614H, AGMH70N70C, AGMH70N70D, AGMH70N90C, AGMH70N90H, IRFP260, AGMS5N50D, AGM308MN, AGM308S, AGM308SR, AGM30P05A, AGM30P05AP, AGM30P05D, AGM30P08A

Keywords - AGML315ME MOSFET specs

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