All MOSFET. AGML315ME Datasheet

 

AGML315ME Datasheet and Replacement


   Type Designator: AGML315ME
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.6(4.2) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28(31) nS
   Cossⓘ - Output Capacitance: 71(74) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029(0.046) Ohm
   Package: SOT23-6L
 

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AGML315ME Datasheet (PDF)

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AGML315ME

AGML315ME General DescriptionThe AGML315ME combines advanced trenchProduct SummaryMOSFET technology with a low resistanceto provide extremely low R .package DS(ON)BVDSS RDSON IDdevice isThis ideal for load switch and batteryprotection applications.30V25m 5.6A Features-30V 43m-4.2A Advance high cell density Trench technologyLow R to minimize cond

Datasheet: AGMH612D , AGMH614C , AGMH614D , AGMH614H , AGMH70N70C , AGMH70N70D , AGMH70N90C , AGMH70N90H , 4435 , AGMS5N50D , , , , , , , .

History: AGMH70N90C | AGMH70N70D | AGMS5N50D | AGMH70N70C | AGMH70N90H

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