All MOSFET. AGMH20P15D Datasheet

 

AGMH20P15D Datasheet and Replacement


   Type Designator: AGMH20P15D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 1216 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO252
 

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AGMH20P15D Datasheet (PDF)

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AGMH20P15D

AGMH20P15D General DescriptionProduct SummaryThe AGMH20P15D combines advanced trenchtoMOSFET technology with a low resistance packageprovideextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.-150V 150m -20A FeaturesTO-252 Pin Configuration Advance high cell density Trench technology Low R to minim

Datasheet: AGMH056N08A , AGMH056N08C , AGMH056N08HM1 , AGMH065N10A , AGMH12N10D , AGMH12N10I , AGMH1405C , AGMH18N20C , RU6888R , AGMH402C , , , , , , , .

History: AGMH065N10A | AGMH12N10I | AGMH18N20C | AGMH402C | AGMH12N10D

Keywords - AGMH20P15D MOSFET datasheet

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