AGMH20P15D PDF and Equivalents Search

 

AGMH20P15D Specs and Replacement

Type Designator: AGMH20P15D

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68 nS

Cossⓘ - Output Capacitance: 1216 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: TO252

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AGMH20P15D datasheet

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 agmh20p15d.pdf pdf_icon

AGMH20P15D

AGMH20P15D General Description Product Summary The AGMH20P15D combines advanced trench to MOSFET technology with a low resistance package provide extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -150V 150m -20A Features TO-252 Pin Configuration Advance high cell density Trench technology Low R to minim... See More ⇒

Detailed specifications: AGMH056N08A, AGMH056N08C, AGMH056N08HM1, AGMH065N10A, AGMH12N10D, AGMH12N10I, AGMH1405C, AGMH18N20C, 18N50, AGMH402C, AGM3404EL, AGM3407E, AGM3415E, AGM3416E, AGM3416EL, AGM4005LL, AGM4005LLM1

Keywords - AGMH20P15D MOSFET specs

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