All MOSFET. AGMH402C Datasheet

 

AGMH402C Datasheet and Replacement


   Type Designator: AGMH402C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 170 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.1 nS
   Cossⓘ - Output Capacitance: 528 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: TO220
 

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AGMH402C Datasheet (PDF)

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AGMH402C

AGMH402C General DescriptionProduct SummaryThe AGMH402C combines advanced trenchMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)This device is ideal switch and battery BVDSS RDSON IDfor loadprotection applications.40V 2.6m170A FeaturesAdvance high cell density Trench technologyTO-220 Pin ConfigurationLow R to mini

 8.1. Size:1431K  cn agmsemi
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AGMH402C

AGMH403A1Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge WaveformFig.9 Switching Time Measurement Circuit Fig.10 Gate Charge WaveformFig.11 Avalanche Measurement Circuit Fig.12 Avalanche Waveformwww.agm-mos.com 4 VER2.72AGMH403A1Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching

Datasheet: AGMH056N08C , AGMH056N08HM1 , AGMH065N10A , AGMH12N10D , AGMH12N10I , AGMH1405C , AGMH18N20C , AGMH20P15D , IRF530 , , , , , , , , .

History: AGMH12N10I | AGMH065N10A | AGMH18N20C | AGMH20P15D

Keywords - AGMH402C MOSFET datasheet

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