AGMH402C MOSFET Datasheet: N-Ch, 40V, 170A. Full specification with pinout and replacement list

AGMH402C Specs and Replacement

Type Designator: AGMH402C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 170 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.1 nS

Cossⓘ - Output Capacitance: 528 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: TO220

AGMH402C substitution

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AGMH402C datasheet

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AGMH402C General Description Product Summary The AGMH402C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery BVDSS RDSON ID for load protection applications. 40V 2.6m 170A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to mini... See More ⇒

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agmh403a1.pdf pdf_icon

AGMH403A1 Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit Fig.12 Avalanche Waveform www.agm-mos.com 4 VER2.72 AGMH403A1 Figure1 Gate Charge Test Circuit & Waveform Figure 2 Resistive Switching Test Circuit & Waveforms Figure 3 Unclamped Inductive Switching... See More ⇒

Detailed specifications: AGMH056N08C, AGMH056N08HM1, AGMH065N10A, AGMH12N10D, AGMH12N10I, AGMH1405C, AGMH18N20C, AGMH20P15D, 20N50, AGM3404EL, AGM3407E, AGM3415E, AGM3416E, AGM3416EL, AGM4005LL, AGM4005LLM1, AGM4008LL