All MOSFET. AGM6N20D Datasheet

 

AGM6N20D Datasheet and Replacement


   Type Designator: AGM6N20D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TO252
 

 AGM6N20D substitution

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AGM6N20D Datasheet (PDF)

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AGM6N20D

AGM6N20DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250A 200 -- -- VGS DZero Gate Voltage Drain Current V =200V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100VGS(th) Gate Threshold Voltage V

Datasheet: AGM628MAP , AGM628MD , AGM628MN , AGM628S , AGM655D , AGM65R380F , AGM665D , AGM665E , AO4468 , AGM7N65D , AGM85P10A , AGM85P10D , AGMH022N10H , AGMH022N10LL , , , .

History: AGMH022N10H

Keywords - AGM6N20D MOSFET datasheet

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