AGM7N65D Specs and Replacement
Type Designator: AGM7N65D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 97 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 87 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.52 Ohm
Package: TO252
AGM7N65D substitution
- MOSFET ⓘ Cross-Reference Search
AGM7N65D datasheet
agm7n65d.pdf
AGM7N65D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A GS D 650 -- -- V Zero Gate Voltage Drain Current V =650V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 30V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage ... See More ⇒
Detailed specifications: AGM628MD, AGM628MN, AGM628S, AGM655D, AGM65R380F, AGM665D, AGM665E, AGM6N20D, AO4407A, AGM85P10A, AGM85P10D, AGMH022N10H, AGMH022N10LL, AGM4025Q, AGM402A, AGM402A1, AGM402C
Keywords - AGM7N65D MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: WSR10N65F
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