All MOSFET. AGM7N65D Datasheet

 

AGM7N65D Datasheet and Replacement


   Type Designator: AGM7N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 97 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 87 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.52 Ohm
   Package: TO252
 

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AGM7N65D Datasheet (PDF)

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AGM7N65D

AGM7N65DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter ConditionsMin Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250AGS D650 -- -- VZero Gate Voltage Drain Current V =650V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =30V,V =0V -- -- nAGS DSI GSS 100VGS(th) Gate Threshold Voltage

Datasheet: AGM628MD , AGM628MN , AGM628S , AGM655D , AGM65R380F , AGM665D , AGM665E , AGM6N20D , BS170 , AGM85P10A , AGM85P10D , AGMH022N10H , AGMH022N10LL , , , , .

Keywords - AGM7N65D MOSFET datasheet

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