AGM85P10A PDF and Equivalents Search

 

AGM85P10A Specs and Replacement

Type Designator: AGM85P10A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.103 Ohm

Package: PDFN5X6

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AGM85P10A datasheet

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AGM85P10A

AGM85P10A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -- V GS D -100 -121 Zero Gate Voltage Drain Current V =-100V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Vol... See More ⇒

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AGM85P10A

AGM85P10D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -100 -121 -- V GS D Zero Gate Voltage Drain Current V =-100V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Volt... See More ⇒

Detailed specifications: AGM628MN, AGM628S, AGM655D, AGM65R380F, AGM665D, AGM665E, AGM6N20D, AGM7N65D, 60N06, AGM85P10D, AGMH022N10H, AGMH022N10LL, AGM4025Q, AGM402A, AGM402A1, AGM402C, AGM402C1

Keywords - AGM85P10A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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