AGM406MBQ MOSFET: N-Ch, 40V, 25A. Full datasheet with pinout, specifications and replacement transistor list

AGM406MBQ Datasheet (PDF)

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AGM406MBQTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 40 -- -- VGS DDSSZero Gate Voltage Drain Current V =40V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI 100GSSV Gate Threshold Voltage V =V ,I =2

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AGM406MBPTypical Characteristics2.74010V,6V,5V,4.5V,4VIDS= 250uA2.4Max2.130VGS= 3.5V 1.8Typ1.5201.2Min0.910VGS= 3V Notes: 0.61. 250s pulse test2. Tj=25C0.300 25 50 75 100 125 150 1750 1 2 3 4 5VDS, Drain -Source Voltage (V)Tj - Junction Temperature (C)Fig1. Typical Output CharacteristicsFig2. Typical V Gate -Source Voltage Vs.

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AGM406MNQTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 40 -- -- VGS DDSSZero Gate Voltage Drain Current V =40V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I

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AGM406MNATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 40 -- -- VGS DDSSZero Gate Voltage Drain Current V =40V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I

Datasheet: AGM405D , AGM405DG , AGM405F , AGM405MBP , AGM405MNA , AGM405Q , AGM406AP , AGM406MBP , NCEP15T14 , AGM406MNA , AGM406MNQ , , , , , , .