AGM406MBQ Specs and Replacement
Type Designator: AGM406MBQ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 265 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: WQFN3X3
AGM406MBQ substitution
- MOSFET ⓘ Cross-Reference Search
AGM406MBQ datasheet
agm406mbq.pdf
AGM406MBQ Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I 100 GSS V Gate Threshold Voltage V =V ,I =2... See More ⇒
agm406mbp.pdf
AGM406MBP Typical Characteristics 2.7 40 10V,6V,5V,4.5V,4V IDS= 250uA 2.4 Max 2.1 30 VGS= 3.5V 1.8 Typ 1.5 20 1.2 Min 0.9 10 VGS= 3V Notes 0.6 1. 250 s pulse test 2. Tj=25 C 0.3 0 0 25 50 75 100 125 150 175 0 1 2 3 4 5 VDS, Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. Typical V Gate -Source Voltage Vs. ... See More ⇒
agm406mnq.pdf
AGM406MNQ Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I... See More ⇒
agm406mna.pdf
AGM406MNA Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I... See More ⇒
Detailed specifications: AGM405D, AGM405DG, AGM405F, AGM405MBP, AGM405MNA, AGM405Q, AGM406AP, AGM406MBP, NCEP15T14, AGM406MNA, AGM406MNQ, AGM60P30A, AGM60P30AP, AGM60P30C, AGM60P30D, AGM60P35F, AGM60P40A
Keywords - AGM406MBQ MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: 2SK1623 | ZXMN7A11GTA | ELM32428LA | VS7N65AD | IRF7807ATR | 2SK1217 | WPMD2011
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