AGM406MBQ - аналоги, параметры транзистора - Справочник транзисторов

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AGM406MBQ Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I 100 GSS V Gate Threshold Voltage V =V ,I =2

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AGM406MBP Typical Characteristics 2.7 40 10V,6V,5V,4.5V,4V IDS= 250uA 2.4 Max 2.1 30 VGS= 3.5V 1.8 Typ 1.5 20 1.2 Min 0.9 10 VGS= 3V Notes 0.6 1. 250 s pulse test 2. Tj=25 C 0.3 0 0 25 50 75 100 125 150 175 0 1 2 3 4 5 VDS, Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. Typical V Gate -Source Voltage Vs.

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AGM406MNQ Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I

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AGM406MNA Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I

Другие MOSFET... AGM405D , AGM405DG , AGM405F , AGM405MBP , AGM405MNA , AGM405Q , AGM406AP , AGM406MBP , NCEP15T14 , AGM406MNA , AGM406MNQ , AGM60P30A , AGM60P30AP , AGM60P30C , AGM60P30D , AGM60P35F , AGM60P40A .