All MOSFET. ZXMN4A06K Datasheet

 

ZXMN4A06K Datasheet and Replacement


   Type Designator: ZXMN4A06K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 9.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 10.9 A
   Qg ⓘ - Total Gate Charge: 17.1 nC
   Cossⓘ - Output Capacitance: 827 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO252 DPAK
 
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ZXMN4A06K Datasheet (PDF)

 ..1. Size:564K  diodes
 zxmn4a06k.pdf pdf_icon

ZXMN4A06K

ZXMN4A06K40V N-channel enhancement mode MOSFETSummaryV(BR)DSS= -40V; RDS(ON) = 0.05 ; ID = 10.9ADescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage,power management applications.FeaturesD Low on-resistance

 0.1. Size:561K  zetex
 zxmn4a06ktc.pdf pdf_icon

ZXMN4A06K

ZXMN4A06K40V N-channel enhancement mode MOSFETSummaryV(BR)DSS= -40V; RDS(ON) = 0.05 ; ID = 10.9ADescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage,power management applications.FeaturesD Low on-resistance

 6.1. Size:168K  diodes
 zxmn4a06g.pdf pdf_icon

ZXMN4A06K

ZXMN4A06G40V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 40V; RDS(ON)= 0.05 ID= 7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT223 Low on-resistance F

 6.2. Size:376K  diodes
 zxmn4a06gq.pdf pdf_icon

ZXMN4A06K

ZXMN4A06GQGreen40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) TA = +25C Fast Switching Speed 40V 0.05 @ VGS = 10V 7A Low Threshold Low Gate Drive Description Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET

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Datasheet: DMN6068LK3 , DMN6068SE , DMN62D1SFB , DMN66D0LDW , DMN66D0LT , DMN66D0LW , ZXM64N035L3 , ZXMN4A06G , IRFP250 , ZXMN6A07F , ZXMN6A07Z , ZXMN6A08E6 , ZXMN6A08G , ZXMN6A08K , ZXMN6A09DN8 , ZXMN6A09G , ZXMN6A09K .

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