AGM500P20D Datasheet. Specs and Replacement

Type Designator: AGM500P20D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm

Package: TO252

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AGM500P20D datasheet

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AGM500P20D

AGM500P20D General Description Product Summary The AGM500P20D combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -200V 500m -12A Features TO-252 Pin Configuration Advance high cell density Trench technology Low R to minimiz... See More ⇒

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AGM500P20D

AGM502 General Description Product Summary The AGM502 combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 60V 2.0 0.3A Features Advance high cell density Trench technology SOT-523 Pin Configuration Low R to minimize c... See More ⇒

Detailed specifications: AGM420MC, AGM420MD, AGM425M, AGM425MA, AGM425MC, AGM425MD, AGM425ME, AGM435E, 12N60, AGM502, AGM55N15A, AGM55N15D, AGM55P10A, AGM55P10D, AGM55P10S, AGM6014A, AGM6014AP

Keywords - AGM500P20D MOSFET specs

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