AP30H150G Datasheet. Specs and Replacement

Type Designator: AP30H150G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 108 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 393 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: PDFN5X6-8L

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Detailed specifications: AP2716KD, AP2716QD, AP2716SD, AP2N65K, AP3002S, AP3003, AP3004S, AP3065SD, IRFZ44, AP30H150K, AP30H150Q, AP30H180K, AP30H220G, AP30H60K, AP30H80K, AP30N03K, AP30N04K

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs