AP3134N5 Specs and Replacement
Type Designator: AP3134N5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 13 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: SOT523
AP3134N5 substitution
AP3134N5 Specs
ap3139.pdf
AP3139 P-Channel Enhancement Mosfet KD AP3139 SOT-23 C C All Power Microelectronics Co.,Ltd 1 V1.0 AP3139 P-Channel Enhancement Mosfet All Power Microelectronics Co.,Ltd 2 V1.0 AP3139 P-Channel Enhancement Mosfet All Power Microelectronics Co.,Ltd 3 V1.0 AP3139 P-Channel Enhancement Mosfet Dimensions Ref. Millimeters Inches G Typ. Typ. Min. Max. Min. Max. A 2.30 2.40 2.5... See More ⇒
Detailed specifications: AP30H60K , AP30H80K , AP30N03K , AP30N04K , AP30P06 , AP30P06K , AP3100A , AP3101A , 2N7000 , AP3139 , AP3205 , AP3404 , AP3404S , AP3415E , AP3912GD , AP3N50F , AP3N50K .
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