AP3134N5 Datasheet. Specs and Replacement
Type Designator: AP3134N5 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 13 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: SOT523
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AP3134N5 datasheet
ap3139.pdf
AP3139 P-Channel Enhancement Mosfet KD AP3139 SOT-23 C C All Power Microelectronics Co.,Ltd 1 V1.0 AP3139 P-Channel Enhancement Mosfet All Power Microelectronics Co.,Ltd 2 V1.0 AP3139 P-Channel Enhancement Mosfet All Power Microelectronics Co.,Ltd 3 V1.0 AP3139 P-Channel Enhancement Mosfet Dimensions Ref. Millimeters Inches G Typ. Typ. Min. Max. Min. Max. A 2.30 2.40 2.5... See More ⇒
Detailed specifications: AP30H60K, AP30H80K, AP30N03K, AP30N04K, AP30P06, AP30P06K, AP3100A, AP3101A, 2N7000, AP3139, AP3205, AP3404, AP3404S, AP3415E, AP3912GD, AP3N50F, AP3N50K
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