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AP40P04G PDF Specs and Replacement


   Type Designator: AP40P04G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 41.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PDFN5X6-8L
 

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AP40P04G PDF Specs

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AP40P04G

AP40P04DF -40V P-Channel Enhancement Mode MOSFET Description The AP40P04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-40 A DS D R ... See More ⇒

Detailed specifications: AP4580 , AP4606 , AP4688S , AP4008SD , AP4013S , AP40N06K , AP40N100K , AP40N100LK , AON7410 , AP40P04K , AP40P04Q , AP40P05 , AP4812 , AP4812S , AP4813K , AP4846 , AP4847 .

Keywords - AP40P04G MOSFET specs

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