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AP4812 PDF Specs and Replacement


   Type Designator: AP4812
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SO8
 

 AP4812 substitution

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AP4812 PDF Specs

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AP4812

AP4816GSM RoHS-compliant Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp. SCHOTTKY DIODE S1/D2 Simple Drive Requirement CH-1 BVDSS 30V S1/D2 S1/D2 DC-DC Converter Suitable RDS(ON) 22m D1 Fast Switching Performance ID 6.7A G2 CH-2 BVDSS 30V S2/A S2/A SO-8 RDS(ON) 13m G1 Description ID 11.5A The Advanced Power MOSFETs from APEC provide the des... See More ⇒

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AP4812

AP4813GYT-HF Halogen-Free Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE D Simple Drive Requirement BVDSS 30V Good Recovery Time RDS(ON) 10m Schottky Diode Small Size & Lower Profile ID 15A G RoHS Compliant & Halogen-Free S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fas... See More ⇒

Detailed specifications: AP4013S , AP40N06K , AP40N100K , AP40N100LK , AP40P04G , AP40P04K , AP40P04Q , AP40P05 , IRFB3607 , AP4812S , AP4813K , AP4846 , AP4847 , AP4946S , AP5040QD , AP50N04GD , AP50N04K .

History: AP4812S | AP4847 | AP4013S

Keywords - AP4812 MOSFET specs

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