AP80N06H Datasheet. Specs and Replacement

Type Designator: AP80N06H  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 108 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO220

  📄📄 Copy 

AP80N06H substitution

- MOSFET ⓘ Cross-Reference Search

 

AP80N06H datasheet

 ..1. Size:583K  allpower
 ap80n06h.pdf pdf_icon

AP80N06H

... See More ⇒

 7.1. Size:599K  allpower
 ap80n06t.pdf pdf_icon

AP80N06H

... See More ⇒

 7.2. Size:575K  allpower
 ap80n06dh.pdf pdf_icon

AP80N06H

... See More ⇒

 7.3. Size:2631K  cn apm
 ap80n06d.pdf pdf_icon

AP80N06H

AP80N06D 60V N-Channel Enhancement Mode MOSFET Description The AP80N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 7.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =80 A DS D R ... See More ⇒

SHOW MORE

Detailed specifications: AP6800, AP6802, AP6900, AP70N100K, AP70P03K, AP75N04K, AP7N10K, AP80N06DH, 2N60, AP80N06T, AP80P04K, AP85N04G, AP85N04K, AP85N04Q, AP85P04G, AP90N03GD, AP90N04G

Keywords - AP80N06H MOSFET specs

 AP80N06H cross reference

 AP80N06H equivalent finder

 AP80N06H pdf lookup

 AP80N06H substitution

 AP80N06H replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.