APG028N10 Datasheet. Specs and Replacement

Type Designator: APG028N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 272 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 210 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 2780 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: TO220

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APG028N10 datasheet

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Detailed specifications: APC60R030WMF, APC65R190FM, APG011N03G, APG011N04G, APG013N04G, APG020N01GD, APG022N06G, APG024N04G, IRF840, APG032N04G, APG035N04Q, APG038N01G, APG042N01D, APG045N85, APG070N12G, APG078N07, APG078N07K

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