APG042N01D Datasheet. Specs and Replacement

Type Designator: APG042N01D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 215 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 145 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 673 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO263

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Detailed specifications: APG013N04G, APG020N01GD, APG022N06G, APG024N04G, APG028N10, APG032N04G, APG035N04Q, APG038N01G, IRF540, APG045N85, APG070N12G, APG078N07, APG078N07K, APG080N12, APG082N01, APG095N01, APG095N01K

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