APG042N01D Specs and Replacement
Type Designator: APG042N01D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 215 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 145 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 673 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: TO263
APG042N01D substitution
APG042N01D datasheet
Detailed specifications: APG013N04G , APG020N01GD , APG022N06G , APG024N04G , APG028N10 , APG032N04G , APG035N04Q , APG038N01G , IRF540 , APG045N85 , , , , , , , .
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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MOSFET: APG045N85 | APG042N01D | APG038N01G | APG035N04Q | APG032N04G | APG028N10 | APG024N04G | APG022N06G | APG020N01GD | APG013N04G
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