APG080N12 Datasheet. Specs and Replacement

Type Designator: APG080N12  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 106 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 352 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220

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APG080N12 datasheet

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APG080N12

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APG080N12

APG082N01 N-Channel Enhancement Mosfet Feature 100V,100A R ... See More ⇒

Detailed specifications: APG032N04G, APG035N04Q, APG038N01G, APG042N01D, APG045N85, APG070N12G, APG078N07, APG078N07K, IRF640, APG082N01, APG095N01, APG095N01K, APG250N01Q, APP50N06, APP540, APG045N85D, APG046N01G

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