APG082N01 Datasheet. Specs and Replacement

Type Designator: APG082N01  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 155 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm

Package: TO220

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APG082N01 datasheet

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APG082N01

APG082N01 N-Channel Enhancement Mosfet Feature 100V,100A R ... See More ⇒

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APG082N01

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Detailed specifications: APG035N04Q, APG038N01G, APG042N01D, APG045N85, APG070N12G, APG078N07, APG078N07K, APG080N12, IRLZ44N, APG095N01, APG095N01K, APG250N01Q, APP50N06, APP540, APG045N85D, APG046N01G, APG050N85

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