APG095N01K Datasheet. Specs and Replacement

Type Designator: APG095N01K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 618 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: TO252

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Detailed specifications: APG042N01D, APG045N85, APG070N12G, APG078N07, APG078N07K, APG080N12, APG082N01, APG095N01, IRFP260N, APG250N01Q, APP50N06, APP540, APG045N85D, APG046N01G, APG050N85, APG050N85D, APG054N10

Keywords - APG095N01K MOSFET specs

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