APP50N06 Datasheet. Specs and Replacement
Type Designator: APP50N06 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 460 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO220
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APP50N06 substitution
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APP50N06 datasheet
Detailed specifications: APG070N12G, APG078N07, APG078N07K, APG080N12, APG082N01, APG095N01, APG095N01K, APG250N01Q, IRF640N, APP540, APG045N85D, APG046N01G, APG050N85, APG050N85D, APG054N10, APG054N10D, APG060N85D
Keywords - APP50N06 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
MOSFET Parameters. How They Affect Each Other
History: P0260EIS | GKI06071 | CS2N100U | 2SK1701 | APG078N07K | IXFK20N120P | APJ10N65P
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