APG045N85D Datasheet. Specs and Replacement

Type Designator: APG045N85D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 140 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 819 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO263

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Detailed specifications: APG078N07K, APG080N12, APG082N01, APG095N01, APG095N01K, APG250N01Q, APP50N06, APP540, 8205A, APG046N01G, APG050N85, APG050N85D, APG054N10, APG054N10D, APG060N85D, APG068N04G, APG068N04Q

Keywords - APG045N85D MOSFET specs

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