APG050N85D Datasheet. Specs and Replacement

Type Designator: APG050N85D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 196 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 135 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 771 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO263

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Detailed specifications: APG095N01, APG095N01K, APG250N01Q, APP50N06, APP540, APG045N85D, APG046N01G, APG050N85, IRFB4115, APG054N10, APG054N10D, APG060N85D, APG068N04G, APG068N04Q, AO3480, AO3481C, AOB29S50L

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