APG054N10 Datasheet. Specs and Replacement
Type Designator: APG054N10 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 1075 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
Package: TO220
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APG054N10 substitution
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APG054N10 datasheet
Detailed specifications: APG095N01K, APG250N01Q, APP50N06, APP540, APG045N85D, APG046N01G, APG050N85, APG050N85D, IRFB4227, APG054N10D, APG060N85D, APG068N04G, APG068N04Q, AO3480, AO3481C, AOB29S50L, AOB380A60L
Keywords - APG054N10 MOSFET specs
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MOSFET Parameters. How They Affect Each Other
History: IRFM5210 | NCE3401Y | SWP058R72E7T | FQD4N20TF | APJ30N65F | R6004JNX | NCE2010E
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