AO3480 Datasheet. Specs and Replacement

Type Designator: AO3480  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0265 Ohm

Package: SOT23

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AO3480 datasheet

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AO3480

AO3480 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO3480 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 5.7A extremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V) ... See More ⇒

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AO3480

AO3480C 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=4.5V) 6.2A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AO3480

AO3485C 20V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -4.5A Low Gate Charge RDS(ON) (at VGS=-4.5V) ... See More ⇒

 9.2. Size:655K  aosemi
 ao3481c.pdf pdf_icon

AO3480

AO3481C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -4.3A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒

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Detailed specifications: APG046N01G, APG050N85, APG050N85D, APG054N10, APG054N10D, APG060N85D, APG068N04G, APG068N04Q, IRFP250N, AO3481C, AOB29S50L, AOB380A60L, AOK033V120X2, AOK033V120X2Q, AOK065V120X2, AOK065V65X2, AOK500V120X2

Keywords - AO3480 MOSFET specs

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