AO3481C Datasheet: MOSFET, P-Ch, 30V, 4.3A. Full specification with pinout and replacement list

AO3481C Datasheet. Specs and Replacement

Type Designator: AO3481C 📄📄

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOT23

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AO3481C datasheet

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AO3481C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -4.3A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒

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AO3481 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO3481 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate ID (at VGS=-10V) -4.0A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V) ... See More ⇒

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AO3485C 20V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -4.5A Low Gate Charge RDS(ON) (at VGS=-4.5V) ... See More ⇒

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AO3480 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO3480 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 5.7A extremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V) ... See More ⇒