AOB380A60L Datasheet. Specs and Replacement

Type Designator: AOB380A60L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 131 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO263

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AOB380A60L datasheet

 ..1. Size:647K  aosemi
 aotf380a60l aot380a60l aob380a60l.pdf pdf_icon

AOB380A60L

AOTF380A60L/AOT380A60L/AOB380A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 5.1. Size:649K  aosemi
 aob380a60cl.pdf pdf_icon

AOB380A60L

AOTF380A60CL/AOT380A60CL/AOB380A60CL TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 5.2. Size:649K  aosemi
 aotf380a60cl aot380a60cl aob380a60cl.pdf pdf_icon

AOB380A60L

AOTF380A60CL/AOT380A60CL/AOB380A60CL TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

Detailed specifications: APG054N10, APG054N10D, APG060N85D, APG068N04G, APG068N04Q, AO3480, AO3481C, AOB29S50L, STP75NF75, AOK033V120X2, AOK033V120X2Q, AOK065V120X2, AOK065V65X2, AOK500V120X2, AOM033V120X2, AOM065V120X2Q, AONV070V65G1

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