AOM065V120X2Q PDF and Equivalents Search

 

AOM065V120X2Q Specs and Replacement

Type Designator: AOM065V120X2Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 187.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V

|Id| ⓘ - Maximum Drain Current: 40.3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.2 nS

Cossⓘ - Output Capacitance: 71 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: TO247-4L

AOM065V120X2Q substitution

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AOM065V120X2Q datasheet

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AOM065V120X2Q

AOM065V120X2Q 1200 V SiC Silicon Carbide Power MOSFET Features Product Summary Proprietary SiC MOSFET technology V @ T 1200 V DS J, max Low loss, with low R DS, ON I 85 A DM Fast switching with low R and low capacitance G R 65 m DS(ON), typ Optimized gate drive voltage (V = 15 V) GS Q 142 nC rr Low reverse recovery diode (Qrr) E @ 800 V 30 ... See More ⇒

Detailed specifications: AOB29S50L , AOB380A60L , AOK033V120X2 , AOK033V120X2Q , AOK065V120X2 , AOK065V65X2 , AOK500V120X2 , AOM033V120X2 , K3569 , AONV070V65G1 , AOTF11S60L , AOTF27S60L , AOTF950A70L , , , , .

Keywords - AOM065V120X2Q MOSFET specs

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