AONV070V65G1 GaN Datasheet: N-Ch, 650V, 16A. Full specification with pinout and replacement list

AONV070V65G1 Specs and Replacement

Type Designator: AONV070V65G1

Type of Transistor: GaN

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.4 nS

Cossⓘ - Output Capacitance: 58 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: DFN8X8-8L

AONV070V65G1 substitution

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AONV070V65G1 datasheet

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AONV070V65G1 650V Enhancement Mode GaN Transistor Features Product Summary 650V Enhancement Mode GaN Transistor VDS @ TJ, max 650V Normal-off Design IDM 45A Ultra-low Qg RDS(ON) 70m No Qrr Qg, typ 6.9nC Low Inductance Eoss @ 400V 6 J Applications Server Power Supplies High-Frequency Converters Resonant Topologies Pin Configuration and Pin Nam... See More ⇒

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AONV095A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 140A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

Detailed specifications: AOB380A60L , AOK033V120X2 , AOK033V120X2Q , AOK065V120X2 , AOK065V65X2 , AOK500V120X2 , AOM033V120X2 , AOM065V120X2Q , IRFP260 , AOTF11S60L , AOTF27S60L , AOTF950A70L , , , , , .