ASB60R150E PDF and Equivalents Search

 

ASB60R150E Specs and Replacement

Type Designator: ASB60R150E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 195 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21.6 nS

Cossⓘ - Output Capacitance: 218 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO263

ASB60R150E substitution

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ASB60R150E datasheet

 ..1. Size:816K  cn anhi
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ASB60R150E

ASA60R150E, ASW60R150E, ASB60R150E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, single-ended flyback or two-transistor forward, Half bridge or Asymmetric half bridge or Series resonance half bridge topologies. PC power, Adaptor, LCD & PDP TV,LED Lighting, Server power, Telecom power, and UPS Application. 2. Features Low drain-source on-resistance RDS(ON) = 0.1... See More ⇒

Detailed specifications: ASA65R850E , ASA70R240E , ASA70R380E , ASA70R600E , ASA70R950E , ASA80R290E , ASA80R750E , ASA80R900E , IRFZ44N , ASB65R120EFD , ASB65R220E , ASB65R300E , ASB70R380E , ASB80R750E , , , .

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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