ASB80R750E PDF and Equivalents Search

 

ASB80R750E Specs and Replacement

Type Designator: ASB80R750E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 750 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34.8 nS

Cossⓘ - Output Capacitance: 34.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO263

ASB80R750E substitution

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ASB80R750E datasheet

 ..1. Size:724K  cn anhi
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ASB80R750E

ASA80R750E, ASD80R750E, ASB80R750E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 620m (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Val... See More ⇒

Detailed specifications: ASA80R290E , ASA80R750E , ASA80R900E , ASB60R150E , ASB65R120EFD , ASB65R220E , ASB65R300E , ASB70R380E , IRF540N , , , , , , , , .

History: ASB60R150E

Keywords - ASB80R750E MOSFET specs

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