ASE70R950E PDF and Equivalents Search

 

ASE70R950E Specs and Replacement

Type Designator: ASE70R950E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21.6 nS

Cossⓘ - Output Capacitance: 33 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm

Package: SOT223

ASE70R950E substitution

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ASE70R950E datasheet

 ..1. Size:700K  cn anhi
 asa70r950e asd70r950e ase70r950e.pdf pdf_icon

ASE70R950E

ASA70R950E,ASD70R950E,ASE70R950E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback. PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 0.870 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Value Unit V 750 V DS @ T j,max R 950 DS(o... See More ⇒

Detailed specifications: ASD65R300E, ASD65R350E, ASD65R550E, ASD65R850E, ASD70R380E, ASD70R600E, ASD70R950E, ASD80R750E, IRF3710, ASM60R330E, ASM65R280E, ASQ65R046EFD, ASR65R046EFD, ASR65R120EFD, ASU65R350E, ASU65R550E, ASU65R850E

Keywords - ASE70R950E MOSFET specs

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