ASM65R280E PDF and Equivalents Search

 

ASM65R280E Specs and Replacement

Type Designator: ASM65R280E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 126 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 40.67 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: DFN8X8

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ASM65R280E datasheet

 ..1. Size:1230K  cn anhi
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ASM65R280E

ASA65R280E, ASD65R280E, ASM65R280E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 240m (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Val... See More ⇒

Detailed specifications: ASD65R550E, ASD65R850E, ASD70R380E, ASD70R600E, ASD70R950E, ASD80R750E, ASE70R950E, ASM60R330E, AON6414A

Keywords - ASM65R280E MOSFET specs

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