ASQ65R046EFD Specs and Replacement
Type Designator: ASQ65R046EFD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 347 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 59 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35.1 nS
Cossⓘ - Output Capacitance: 101.8 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
Package: TO247-4L
ASQ65R046EFD substitution
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ASQ65R046EFD datasheet
asw65r046efd asq65r046efd asr65r046efd.pdf
ASW65R046EFD, ASQ65R046EFD, ASR65R046EFD MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 39m (typ.) Easy to control Gate switching Enhancement mode Vth = 3.2 to 4.5 V Table 1 Key Performance Parameters Paramete... See More ⇒
Detailed specifications: ASD65R850E, ASD70R380E, ASD70R600E, ASD70R950E, ASD80R750E, ASE70R950E, ASM60R330E, ASM65R280E, IRFB4115
Keywords - ASQ65R046EFD MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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MOSFET: ASU70R600E | ASU65R850E | ASU65R550E | ASU65R350E | ASR65R120EFD | ASR65R046EFD | ASQ65R046EFD | ASM65R280E | ASM60R330E | ASE70R950E
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