ASQ65R046EFD PDF and Equivalents Search

 

ASQ65R046EFD Specs and Replacement

Type Designator: ASQ65R046EFD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 347 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 59 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35.1 nS

Cossⓘ - Output Capacitance: 101.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm

Package: TO247-4L

ASQ65R046EFD substitution

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ASQ65R046EFD datasheet

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ASQ65R046EFD

ASW65R046EFD, ASQ65R046EFD, ASR65R046EFD MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 39m (typ.) Easy to control Gate switching Enhancement mode Vth = 3.2 to 4.5 V Table 1 Key Performance Parameters Paramete... See More ⇒

Detailed specifications: ASD65R850E, ASD70R380E, ASD70R600E, ASD70R950E, ASD80R750E, ASE70R950E, ASM60R330E, ASM65R280E, IRFB4115

Keywords - ASQ65R046EFD MOSFET specs

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