ASU70R600E PDF and Equivalents Search

 

ASU70R600E Specs and Replacement

Type Designator: ASU70R600E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 86 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24.8 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO251

ASU70R600E substitution

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ASU70R600E datasheet

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ASU70R600E

ASA70R600E ASU70R600E ASD70R600E ASU70R600E ASD70R600E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward transistor forward topologies. PD Adaptor,LCD & PDP TV and LED LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 0. RDS(ON) = 0.540 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V E... See More ⇒

Detailed specifications: ASM60R330E, ASM65R280E, ASQ65R046EFD, ASR65R046EFD, ASR65R120EFD, ASU65R350E, ASU65R550E, ASU65R850E, IRF630

Keywords - ASU70R600E MOSFET specs

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