ASW80R290E Specs and Replacement
Type Designator: ASW80R290E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 46 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO247
ASW80R290E substitution
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ASW80R290E datasheet
asa80r290e asw80r290e.pdf
ASA80R290E, ASW80R29 90E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) resistance RDS(ON) = 0.250 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 4.... See More ⇒
Detailed specifications: ASW60R090EFDA, ASW60R150E, ASW65R041E, ASW65R041EFDA, ASW65R046EFD, ASW65R095EFD, ASW65R110E, ASW65R120EFD, IRFP260
Keywords - ASW80R290E MOSFET specs
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MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E
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