AUB026N085 PDF and Equivalents Search

 

AUB026N085 Specs and Replacement

Type Designator: AUB026N085

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 275 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 195 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47 nS

Cossⓘ - Output Capacitance: 3500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: TO263

AUB026N085 substitution

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AUB026N085 datasheet

 ..1. Size:761K  cn anhi
 aup026n085 aub026n085.pdf pdf_icon

AUB026N085

AUP026N085, AUB026N085 MOSFET Silicon N-Channel MOS 1. Applications Synchronous rectification in SMPS, Hard switching and High speed circuit DC/DC in telecoms and industrial 2. Features Low drain-source on-resistance RDS(on) = 2.1m (typ.) High speed power switching Enhanced body diode dv/dt capability Enhanced avalanche ruggedness Table 1 Key Performance Parameters P... See More ⇒

 ..2. Size:946K  cn anhi
 aup026n085 aub026n085 aur020n085.pdf pdf_icon

AUB026N085

AUP026N085, AUB026N085, AUR020N085 MOSFET Silicon N-Channel MOS 1. Applications Synchronous rectification in SMPS, Hard switching and High speed circuit DC/DC in telecoms and industrial 2. Features Low drain-source on-resistance TO220&TO263 RDS(on) = 2.1m (typ.) TOLL-8L RDS(on) = 1.8 m (typ.) High speed power switching Enhanced body diode dv/dt capability Enhanced... See More ⇒

Detailed specifications: ASW65R095EFD, ASW65R110E, ASW65R120EFD, ASW80R290E, AUA039N10, AUA056N08BGL, AUA060N08AG, AUA062N08BG, 13N50

Keywords - AUB026N085 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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