AUN050N08BGL PDF and Equivalents Search

 

AUN050N08BGL Specs and Replacement

Type Designator: AUN050N08BGL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 151 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.6 nS

Cossⓘ - Output Capacitance: 1215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: DFN5X6

AUN050N08BGL substitution

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AUN050N08BGL datasheet

 ..1. Size:962K  cn anhi
 aup056n08bgl aud056n08bgl aun050n08bgl aua056n08bgl aub056n08bgl.pdf pdf_icon

AUN050N08BGL

AUP056N08BGL, AUD056N08BGL, AUN050N08BGL, AUA056N08BGL, AUB056N08BGL MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 4.9m (typ.) Easy to control Gate switching Enhancement mode Vth = 1.2 to 2.5 V Table 1 Key Pe... See More ⇒

 9.1. Size:1110K  cn anhi
 aun053n10 aub056n10 aup056n10.pdf pdf_icon

AUN050N08BGL

AUN053N10, AUB056N10, AUP056N10 MOSFET Silicon N-Channel MOS 1. Applications Synchronous rectification in SMPS, Hard switching and High speed circuit DC/DC in telecoms and industrial 2. Features Low drain-source on-resistance DFN5X6 RDS(ON) = 4.6m (typ.) TO263 RDS(ON) = 4.8m (typ.) TO220 RDS(ON) = 4.8m (typ.) High speed power switching Enhanced body diode dv/dt... See More ⇒

Detailed specifications: AUD056N08BGL, AUD060N055, AUD060N08AG, AUD062N08BG, AUD069N10A, AUN036N10, AUN042N055, AUN045N085, 10N65

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