AUN084N10 PDF and Equivalents Search

 

AUN084N10 Specs and Replacement

Type Designator: AUN084N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 66 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 68 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 387 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm

Package: DFN5X6

AUN084N10 substitution

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AUN084N10 datasheet

 ..1. Size:660K  cn anhi
 aun084n10.pdf pdf_icon

AUN084N10

AUN084N10 MOSFET Silicon N-Channel MOS 1. Applications Portable equipment, Battery powered system 2. Features Low drain-source on-resistance RDS(ON) = 0.005 (typ.) High speed power switching Table 1 Key Performance Parameters Parameter Value Unit V 100 V DS @ T j,max R 8.4 DS(on),max m Q 41.7 nC g,typ I 106 A D,pulse 3. Packaging and Internal Circuit ... See More ⇒

Detailed specifications: AUN042N055, AUN045N085, AUN050N08BGL, AUN053N10, AUN060N08AG, AUN062N08BG, AUN063N10, AUN065N10, 20N50

Keywords - AUN084N10 MOSFET specs

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