AUP074N10 Specs and Replacement

Type Designator: AUP074N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 175 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 123 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 361 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0074 Ohm

Package: TO220

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AUP074N10 datasheet

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AUP074N10

AUP074N10 MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 6.5m (typ.) Easy to control Gate switching Enhancement mode Vth = 2.4 to 3.4 V Table 1 Key Performance Parameters Parameter Value Unit V 100 V DS @ ... See More ⇒

Detailed specifications: QM3126M3, AP220N04P, AP220N04T, HYG053N10NS1P, HYG053N10NS1B, AUP060N08AG, AUP062N08BG, AUP065N10, IRFB7545

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